Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated. Keywords: anodization; crystallographically oriented pores; gallium arsenide (GaAs); nanowires; neutral electrolyte; photocurrent; porous GaAs; Introduction

• crystallographically oriented and current line oriented pores has been demonstrated in a variety of semiconductors [1][2][3], to date, only crystallographically oriented pores were observed in GaAs crystalline wafers. This observation is a factor limiting the possibilities for the preparation of various GaAs

• mainly on the anions rather than the cations [22], because the anions of NaCl and HCl electrolytes are the same. The morphology of the porous structure produced by galvanostatic anodization of GaAs(111)A surface (Figure 1A) consists of two sets of ⟨111⟩ crystallographically oriented pores intersecting